{"id":7034557,"date":"2026-08-09T03:01:22","date_gmt":"2026-08-09T03:01:22","guid":{"rendered":"https:\/\/peraltafinancing.com\/5g-technology\/advantages-of-gan-on-si-hemt-for-5g-mm-wave-range-%e2%8b%86-electronics-weekly\/"},"modified":"2026-08-09T03:01:22","modified_gmt":"2026-08-09T03:01:22","slug":"advantages-of-gan-on-si-hemt-for-5g-mm-wave-range-%e2%8b%86-electronics-weekly","status":"publish","type":"post","link":"https:\/\/fivemor.com\/?p=7034557","title":{"rendered":"Advantages of GaN-on-Si HEMT for 5G mm-wave range \u22c6 Electronics Weekly"},"content":{"rendered":"<p> <br \/>\n<\/p>\n<div>\n\t\t\t\t\t\t\t\t\t\t\t\t\t\t\t\t\t\t\t\t<!-- \n\n<p><strong>Researchers at Soitec and Nanyang Technological University have reported 60%+ power-added efficiency (PAE), for moderately scaled GaN-on-Si &nbsp;HEMTs at 30GHz operation. The devices also perform with state-of-the-art noise figures down [&hellip;]<\/strong><\/p>\n\n --><\/p>\n<p>Researchers at Soitec and Nanyang Technological University have reported 60%+ power-added efficiency (PAE), for moderately scaled GaN-on-Si \u00a0HEMTs at 30GHz operation.<\/p>\n<p>The devices also perform with state-of-the-art noise figures down 1.1dB.<\/p>\n<p>\u201cThese results suggest that moderate scaling could deliver competitive technology, when combined with optimised epitaxial structure and process,\u201d say the researchers.<\/p>\n<p>The researchers see the low-voltage (3\u20136V) RF devices as being suitable for monolithic integrated mobile transmit\/receive (T\/R) modules for the 5G high-frequency, mm-wave range (<a href=\"https:\/\/www.everythingrf.com\/community\/5g-fr2-frequency-bands\" target=\"_blank\" rel=\"nofollow\">FR2<\/a>, 24.25\u201371.0GHz).<\/p>\n<p>The low 5G range, FR1, covers 410\u20137125MHz. A proposed FR3, apparently not yet official, would bridge the gap between FR1 and FR2, i.e. 7.125\u201324.25GHz.<\/p>\n<p>Existing technologies such as (mSiGe HBTs and GaAs pHEMTs struggle to meet the stringent requirements for FR2.<\/p>\n<p><img fetchpriority=\"high\" decoding=\"async\" class=\"aligncenter size-full wp-image-890391\" src=\"https:\/\/static.electronicsweekly.com\/wp-content\/uploads\/2026\/03\/03071648\/IMG_1824.webp\" alt=\"\" width=\"630\" height=\"317\" srcset=\"https:\/\/static.electronicsweekly.com\/wp-content\/uploads\/2026\/03\/03071648\/IMG_1824.webp 630w, https:\/\/static.electronicsweekly.com\/wp-content\/uploads\/2026\/03\/03071648\/IMG_1824-300x151.webp 300w\" sizes=\"(max-width: 630px) 100vw, 630px\"\/><\/p>\n<p>The high-volume mobile device market needs the low-cost and mass-production scale that could come from achieving high performance on GaN-on-Si HEMT platforms.<\/p>\n<p>The GaN material for the devices (Figure 1) was grown on high-resistivity silicon (Si) by metal-organic chemical vapor deposition (MOCVD). The structure included back- and top-barriers consisting of alu<sub>min<\/sub>ium gallium nitride (AlGaN) and indium alu<sub>min<\/sub>ium nitride (InAlN) alloys, respectively.<\/p>\n<p>The researchers comment: \u201cThe InAlN barrier provides strong polarization and a low gate-to-channel distance, enabling improved two-dimensional electron gas (2DEG) control. Additionally, the configuration of the ultra-thin GaN channel and the AlGaN BB further enhances electron confinement, effectively suppressing short-channel effects and lowering channel noise.\u201d<\/p>\n<p>The 80nm-deep n-GaN source\/drain contact regions were grown by 725\u00b0C molecular beam epitaxy (MBE). The T-gate consisted of nickel\/gold. The passivation was a bilayer of 250\u00b0C atomic layer deposition (ALD) alu<sub>min<\/sub>ium oxide (Al<sub>2<\/sub>O<sub>3<\/sub>, 10nm) and 300\u00b0C plasma-enhanced CVD silicon nitride (60nm), aimed at suppressing surface trapping and leakage.<\/p>\n<p>The researchers report that the passivation effectively reduced current collapse from more than 80% down to 24% in a 150nm gate-length (L<sub>g<\/sub>) device. Gate lag was 10%. The HEMT\u2019s other measured characteristics were 1.58A\/mm maximum drain current, 1.48\u03a9-mm on-resistance, threshold voltage \u22122.9V, and 0.52S\/mm peak transconductance at 6V drain bias.<\/p>\n<p>For the small-signal frequency performance the researchers report for a 100nm-gate HEMT cut-off (f<sub>T<\/sub>)\/maximum oscillation (f<sub>max<\/sub>) respective values of 100GHz\/254GHz at 10V drain. The f<sub>max<\/sub> value for 5V drain was still more than 200GHz.<\/p>\n<p>The researchers add: \u201cThe L<sub>g<\/sub> = 150nm device still achieves an excellent f<sub>max<\/sub>xL<sub>g<\/sub> of 34.9GHz-\u03bcm which is comparable to the highest reported values obtained from extremely scaled GaN-on-Si HEMTs.\u201d<\/p>\n<p>The PAE of a 100nm-gate device exceeded 60% across the 3\u20136V low-voltage range. The peak occurred at 63.7% at 3V and 4V.<\/p>\n<p>\u201cThanks to the effectiveness of the proposed bilayer passivation in suppressing surface trapping effects, no significant difference in performance is observed between CW and pulsed modes,\u201d the team comments.<\/p>\n<p>The linear gain varied with L<sub>g<\/sub> from 10.8dB at 150nm gate, through 11.1dB at 100nm, down to 14.7dB at 60nm. The researchers comment: \u201cThe high efficiency in low-voltage operation proves its potential for mobile applications.\u201d<\/p>\n<p>The researchers explain the low-noise performance measured in a cold-source system: \u201cThe excellent electron confinement, high gain, and low parasitic resistance, enabled by the ultra-thin channel, AlGaN BB, and regrown ohmic contacts, result in outstanding low-noise characteristics (NF<sub>min<\/sub>\n<\/p>\n<p>The lowest NF<sub>min<\/sub> of 1.1dB corresponded to a G<sub>a<\/sub> of 8.3dB. Lowering the operating frequency to 13GHz, NF<sub>min<\/sub> reduced to 0.8dB and G<sub>a<\/sub> increased to 14.1dB. Scaling L<sub>g<\/sub> down also increased G<sub>a<\/sub> and reduced NF<sub>min<\/sub>.<\/p>\n<p>Benchmarking against previous reports, the team claims record high efficiency, more than 60%, and state-of-the-art 1.1dB noise performance at 100nm, i.e.without extreme lateral scaling.<\/p>\n<p>A further benchmark shows the HEMTs to have high efficiency and low noise simultaneously compared with both GaN\/Si and the more expensive GaN on silicon carbide (SiC) technology<\/p>\n<\/p><\/div>\n\n","protected":false},"excerpt":{"rendered":"<p>Researchers at Soitec and Nanyang Technological University have reported 60%+ power-added efficiency (PAE), for moderately scaled GaN-on-Si \u00a0HEMTs at 30GHz operation. The devices also perform with state-of-the-art noise figures down 1.1dB. \u201cThese results suggest that moderate scaling could deliver competitive technology, when combined with optimised epitaxial structure and process,\u201d say the researchers. The researchers see [&hellip;]<\/p>\n","protected":false},"author":1,"featured_media":7034558,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[12020],"tags":[5229,4215,197761,197762,20507,2586,6039],"dealstore":[],"offerexpiration":[],"class_list":["post-7034557","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-5g-technology","tag-advantages","tag-electronics","tag-ganonsi","tag-hemt","tag-mmwave","tag-range","tag-weekly"],"yoast_head":"<!-- This site is optimized with the Yoast SEO plugin v26.4 - https:\/\/yoast.com\/wordpress\/plugins\/seo\/ -->\n<title>Advantages of GaN-on-Si HEMT for 5G mm-wave range \u22c6 Electronics Weekly - Som2ny Network<\/title>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/fivemor.com\/?p=7034557\" \/>\n<meta property=\"og:locale\" content=\"en_US\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"Advantages of GaN-on-Si HEMT for 5G mm-wave range \u22c6 Electronics Weekly - Som2ny Network\" \/>\n<meta property=\"og:description\" content=\"Researchers at Soitec and Nanyang Technological University have reported 60%+ power-added efficiency (PAE), for moderately scaled GaN-on-Si \u00a0HEMTs at 30GHz operation. The devices also perform with state-of-the-art noise figures down 1.1dB. \u201cThese results suggest that moderate scaling could deliver competitive technology, when combined with optimised epitaxial structure and process,\u201d say the researchers. 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The devices also perform with state-of-the-art noise figures down 1.1dB. \u201cThese results suggest that moderate scaling could deliver competitive technology, when combined with optimised epitaxial structure and process,\u201d say the researchers. 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